1895
Growth of High-Quality GaN Template from Nanometer-Size Lattice Channels by Hydride Vapor Phase Epitaxy
Monday, October 28, 2013: 09:10
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Akira Usui
,
Nitride Semiconductor Department, Furukawa Co., Ltd., Oyama, Japan
Hiroki Goto
,
Nitride Semiconductor Department, Furukawa Co., Ltd.
Toshiharu Matsueda
,
Nitride Semiconductor Department, Furukawa Co., Ltd.
Haruo Sunakawa
,
Nitride Semiconductor Department, Furukawa Co., Ltd.
Takuya Nakagawa
,
Nitride Semiconductor Department, Furukawa Co., Ltd.
Akiko Okada
,
Institute for Nanoscience and Nanotechnology, Waseda University
Jun Mizuno
,
Institute for Nanoscience and Nanotechnology, Waseda University
Atsushi A. Yamaguchi
,
Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
Hidetoshi Shinohara
,
Nano Processing System Division, Toshiba Machine Co., Ltd.
Hiroshi Goto
,
Nano Processing System Division, Toshiba Machine Co., Ltd.
