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Effect of Precursor Entrance Sequence during Atomic Layer Deposition on the Al2O3/Ge Interface by X-ray Photoelectron Spectroscopy

Tuesday, October 29, 2013: 10:40
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Jinjuan Xiang , Chinese Academy of Sciences, Beijing, China
Guilei Wang , Chinese Academy of Sciences, Beijing, China
Tingting Li , Chinese Academy of Sciences
Hushan Cui , Chinese Academy of Sciences, Beijing, China
Xiaolei Wang , Chinese Academy of Sciences
Gaobo Xu , Chinese Academy of Sciences
Junfeng Li , Chinese Academy of Sciences
Wenwu Wang , Chinese Academy of Sciences
Chao Zhao , Chinese Academy of Sciences

Abstract:

See more of: Ge and SiGe Channels
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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