224th ECS Meeting (October 27 – November 1, 2013)

October 27 - November 01, 2013

Advanced Spectroscopic Ellipsometry Application for Multi-Layers SiGe at 28nm Node and Beyond
Teng-Chun Hsuan, United Microelectronics Corp. (UMC); Yi-Cheng Hu, United Microelectronics Corp. (UMC); Ming Chih Hsu, United Microelectronics Corp.; Dian-Zhen Zhan, United Microelectronics Corp. (UMC); Stan Yu, United Microelectronics Corp. (UMC); Chin-Cheng Chien, United Microelectronics Corp. (UMC); Shao-Ju Chang, KLA-Tencor Corporation; Sheng-Min Chiu, KLA-Tencor Corporation; Chien-Jen Huang, KLA-Tencor Corporation; Chao-Yu Cheng, KLA-Tencor Corporation; Juli Cheng, KLA-Tencor Corporation; Getin Raphael, KLA-Tencor Corporation; Zhiming Jiang, KLA-Tencor Corporation; Ygartua Carlos, KLA-Tencor Corporation; Zhengquan Tan, KLA-Tencor Corporation; Ray Hoobler, KLA-Tencor Corporation

(Invited) Integration of High-κ Dielectrics on Epitaxial (100), (110) and (111) Germanium for Multifunctional Devices
Mantu K Hudait, PhD, Virginia Tech; Yan Zhu, MS, Virginia Tech; Deepam Maurya, PhD, Virginia Tech; Shashank Priya, PhD, Virginia Tech

Comparison of Strained Sige-On-SOI and Condensed Sgoi p-Mosfet With Various Ge Concentrations (Cancelled)

Break

Effect of Precursor Entrance Sequence during Atomic Layer Deposition on the Al₂O₃/Ge Interface by X-ray Photoelectron Spectroscopy
Jinjuan Xiang, Chinese Academy of Sciences; Guilei Wang, Chinese Academy of Sciences; Tingting Li, Chinese Academy of Sciences; Hushan Cui, Chinese Academy of Sciences; Xiaolei Wang, Chinese Academy of Sciences; Gaobo Xu, Chinese Academy of Sciences; Junfeng Li, Chinese Academy of Sciences; Wenwu Wang, Chinese Academy of Sciences; Chao Zhao, Chinese Academy of Sciences