2007
Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications
Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications
Wednesday, October 30, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E5-2007 (72.4KB) - Abstract Text