2007
		Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications
	
					
	
	Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications
	Wednesday, October 30, 2013
	Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
	
	
	
	Abstract:
- E5-2007 (72.4KB) - Abstract Text
