Wednesday, October 30, 2013: 18:00-20:00
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Kiyoteru Kobayashi
and
Blanka Magyari-Kope
Effect of Intermetal Dielectric Layer On the Interpoly Dielectric Properties of Nonvolatile Memory Devices
Jin-Yong Ryoo, Bachelor, Sungkyunkwan University;
Suk-Kang Sung, Ph.D., Samsung Electronics Co.;
Yong-Sik Yim, Ph.D., Samsung Electronics Co.;
Jun-Eui Song, Bachelor, Samsung Electronics Co.;
Wang-Chul Shin, Bachelor, Samsung Electronics Co.;
Jai-Hyuk Song, Ph.D., Samsung Electronics Co.;
Du-Heon Song, Ph.D., Samsung Electronics Co.;
Jeong-Hyuk Choi, Bachelor, Samsung Electronics Co.;
Yonghan Roh, Ph.D., Sungkyunkwan University
Impact of STI Gap-Fill Process Deposited by HDP-CVD in Flash Memory
Hyoung-sun Park, Samsung Electronics Co., Ltd;
Ki-yong Kim, Samsung Electronics Co., Ltd;
Ok-cheon Hong, Samsung Electronics Co., Ltd;
Hong-sig Kim, Samsung Electronics Co., Ltd;
Haebum Lee, Ph.D., Samsung Electronics Co., Ltd;
Kyu-pil Lee, Ph.D., Samsung Electronics Co., Ltd;
In-soo Cho, Samsung Electronics Co., Ltd;
Byoung-deog Choi, Ph.D., Sungkyunkwan University
