1907
		Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate
	
					
	
	Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate
	Monday, October 28, 2013: 15:20
	Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
	
	
	
	Abstract:
- E3-1907 (766.0KB) - Abstract Text
