1907
Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate
Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate
Monday, October 28, 2013: 15:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E3-1907 (766.0KB) - Abstract Text