1906
Reducing the Wafer Off Angle for 4H-SiC Homoepitaxy

Monday, October 28, 2013: 15:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Kazutoshi Kojima , Advanced Power Electronics Research Center, Tsukuba, Ibaraki, Japan
K. Masumoto , Advanced Power Electronics Research Center
S. Ito , Advanced Power Electronics Research Center
A. Nagata , Advanced Power Electronics Research Center
H. Okumura , R &D partnership for Future Power Electronics Technology

Abstract:

  • E3-1906 (1392.5KB) - Abstract Text
See more of: SiC Epitaxy
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