1905
On-axis 4H SiC Epitaxial Layers for High Power Applications

Monday, October 28, 2013: 14:40
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
J. P. Bergman , Linköping University, Linköping, Sweden

Abstract:

See more of: SiC Epitaxy
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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