SiC Epitaxy

Monday, October 28, 2013: 14:00-16:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
N. Ohtani and Michael Dudley, B.Sc., Ph.D
14:00
1903
Progress in the Resolution of Materials Challenges for High-Voltage SiC Power Devices
Kurt Gaskill, Naval Research Laboratory; Rachael L. Myers-Ward, Naval Research Laboratory; Z. R. Robinson, Naval Research Laboratory; Virginia D. Wheeler, Naval Research Laboratory; P. B. Klein, Naval Research Laboratory; Nadeemullah A Mahadik, Ph. D., Naval Research Laboratory; Robert E Stahlbush, Ph. D., Naval Research Laboratory; Luke O. Nyakiti, Naval Research Laboratory; Anindya Nath, George Mason University; Charles R. Eddy Jr., Naval Research Laboratory
14:20
1904
Comparison of SiC Epitaxial Growth from Dichlorosilane and Tetrafluorosilane Precursors
Haizheng Song, University of South Carolina; Tawhid Rana, University of South Carolina; M.V.S. Chandrashekhar, University of South Carolina; Sabih U. Omar, University of South Carolina; Tangali S. Sudarshan, University of South Carolina
14:40
1905
On-axis 4H SiC Epitaxial Layers for High Power Applications
J. P. Bergman, Linköping University
15:00
1906
Reducing the Wafer Off Angle for 4H-SiC Homoepitaxy
Kazutoshi Kojima, Advanced Power Electronics Research Center; K. Masumoto, Advanced Power Electronics Research Center; S. Ito, Advanced Power Electronics Research Center; A. Nagata, Advanced Power Electronics Research Center; H. Okumura, R &D partnership for Future Power Electronics Technology
15:20
1907
Nucleation of In-Grown Stacking Faults and Dislocation Half Loops in 4H-SiC Epilayers Deposited at High Growth Rate
M. Abadier, Carnegie Mellon Univ.; Rachael L. Myers-Ward, Naval Research Laboratory; Nadeemullah A Mahadik, Ph. D., Naval Research Laboratory; Robert E Stahlbush, Ph. D., Naval Research Laboratory; Virginia D. Wheeler, Naval Research Laboratory; Luke O. Nyakiti, Naval Research Laboratory; Charles R. Eddy Jr., Naval Research Laboratory; Kurt Gaskill, Naval Research Laboratory; Haizheng Song, University of South Carolina; Tangali S. Sudarshan, University of South Carolina; Yoosuf N. Picard, Carnegie Mellon Univ.; Marek Skowronski, Carnegie Mellon Univ.
15:40
1908
3C-SiC on Si Hetero-Epitaxial Growth for Electronic and Biomedical Applications
Meralys Reyes, University of South Florida; Chris Frewin, University of South Florida; P. J. Ward, Anvil Semiconductors Ltd; S. E. Saddow, University of South Florida
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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