2192
Impact of Proton Irradiation on the dc and rf Performance of AlGaN/GaN High Electron Mobility Transistors
Impact of Proton Irradiation on the dc and rf Performance of AlGaN/GaN High Electron Mobility Transistors
Monday, October 28, 2013: 08:00
Golden Gate 7, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Abstract:
- E11-2192 (23.5KB) - Abstract Text