Compound Semiconductor Devices

Monday, October 28, 2013: 08:00-09:40
Golden Gate 7, Tower 3, Lobby Level (Hilton San Francisco Union Square)
08:00
2192
Impact of Proton Irradiation on the dc and rf Performance of AlGaN/GaN High Electron Mobility Transistors
L. Liu, University of Florida; Y. Y. Xi, University of Florida; Fan Ren, Professor, University of Florida; S. J. Pearton, University of Florida; H. -Y. Kim, Korea University; J. Kim, Korea University; I. I. Kravchenko, Oak Ridge National Laboratory
08:40
2193
Pre-ALD Trimethylaluminum Passivation of Al2O3/InGaAs(100) Interfaces
Paul C. McIntyre, Materials Science and Engineering, Stanford University, Stanford, CA, United States
09:20
2194
Investigation of the Current Stability of AlGaN/GaN High Electron Mobility Transistors in Various Liquid/Solid Interface on the Gate Area
Jung-Ying Fang, master, Institute of NanoEngineering and MicroSystems; Chen-Pin Hsu, Ph.D, Institute of NanoEngineering and MicroSystems; Yen-Wen Kang, master, Institute of NanoEngineering and MicroSystems; Kuan Chung Fang, master, Institute of NanoEngineering and MicroSystems; Fan Ren, Professor, University of Florida; Yu-Lin Wang, Professor, Institute of NanoEngineering and MicroSystems
See more of: E11: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) 55
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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