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Pre-ALD Trimethylaluminum Passivation of Al2O3/InGaAs(100) Interfaces

Monday, October 28, 2013: 08:40
Golden Gate 7, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Paul C. McIntyre , Materials Science and Engineering, Stanford University, Stanford, CA, United States, Stanford, CA

Abstract:

See more of: Compound Semiconductor Devices
See more of: E11: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) 55
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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