Monday, October 28, 2013: 14:00-16:40
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Uri Banin, Ph.D.
and
Sanjay K Banerjee
14:20
Resistivity of Ni Silicide Nanowires and Its Dependence on Ni Film Thickness Used for the Formation
Jinhan Song, Tokyo Institute of Technology;
Kazuki Matsumoto, Tokyo Institute of Technology;
Kuniyuki Kakushima, Tokyo Institute of Technology;
Yoshinori Kataoka, Tokyo Institute of Technology;
Akira Nishiyama, Tokyo Institute of Technology;
Nobuyuki Sugii, Tokyo Institute of Technology;
Hitoshi Wakabayashi, Tokyo Institute of Technology;
Kazuo Tsutsui, Tokyo Institute of Technology;
Kenji Natori, Tokyo Institute of Technology;
Hiroshi Iwai, Tokyo Institute of Technology
14:40
(Invited) III-V Nanowires for Optoelectronic Applications
Hoe Tan, PhD, The Australian National University;
N. Jiang, The Australian National University;
D. Saxena, The Australian National University;
Y. H. Lee, The Australian National University;
S. Mokkapati, The Australian National University;
L. Fu, The Australian National University;
Q. Gao, The Australian National University;
H. J. Joyce, University of Oxford;
Chennupati Jagadish, PhD, The Australian National University
15:40
(Invited) Nanoscale Heterogeneous Reactions and Interfaces in Ge/Si and for III-V on Si Integrated Devices
Shadi Dayeh, PhD, University of California San Diego;
Wei Tang, PhD, University of California Los Angeles;
Binh-Minh Nguyen, PhD, University of California San Diego;
Xing Dai, MS, Nanyang Technological University;
Yang Liu, PhD, Sandia National Laboratories;
Yoontae Hwang, PhD, University of California San Diego;
X. -H. Liu, Nanyang Technological University;
Renjie Chen, MS, University of California San Diego
16:10
(Invited) How to Dope a Semiconductor Nanocrystal
Yorai Amit, The Institute of Chemistry, Hebrew University, Jerusalem 91904, Israel;
Adam Fasut, The Center for Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904, Israel;
Oded Milo, PhD, The Center for Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904, Israel;
Eran Rabani, PhD, School of Chemistry, Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel;
Anatoly Frenkel, PhD, The Department of Physics, Yeshiva University, New York, New York 10016, United States;
Uri Banin, Ph.D., The Institute of Chemistry, Hebrew University, Jerusalem 91904, Israel
