Single Electron Transistors

Monday, October 28, 2013: 14:00-15:00
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chair:
Michiharu Tabe
14:00
2218
(Invited) Single Electron and Single Atom CMOS Perspectives
Xavier Jehl, INAC; Marc Sanquer, INAC; Maud Vinet, CEA-Grenoble; Romain Wacquez, CEA-Grenoble
14:30
2219
(Invited) High-Speed Operation of Si Single-Electron Transistor
Yasuo Takahashi, PhD, Hokkaido University; Hiroto Takenaka, Hokkaido University; Takafumi Uchida, Hokkaido University; Masashi Arita, PhD, Hokkaido University; Akira Fujiwara, PhD, NTT Corporation; Hiroshi Inokawa, PhD, Shizuoka University
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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