Integrated CMOS-MEMS Technology and Its Applications

Fusion of microelectromechanical systems (MEMS) with CMOS LSI technologies is a promising way to develop high functional devices. We have been developing the integrated CMOS-MEMS technology that fabricates MEMS devices on CMOS LSI[1-2]. Thetechnology has the features ofhigh-functionality, high-accuracy, and mass-production.

In this paper, first, MEMS technology trends and the concept of the integrated CMOS-MEMS technology are described. Next, we present the multi-physics simulation for the CMOS-MEMS technology[3-4]. Finally, as the examples, we demonstrate the arrayed CMOS-MEMS accelerometer[5-7].

Prospects and challenges of the integrated CMOS-MEMS technology are described from the view point of CMOS-LSI (Fig.1). It indicates that this technology gives the solution of developing high functional devices.

We have developed the multi-physics simulation platform to analyze the electromechanical behaviors of MEMS and CMOS simultaneously. Based on the analytical model, the equivalent circuit was proposed to simulate the above behavior on a Verilog-A compatible hardware description language (Fig.2).

Small size and wide range accelerometers are increasingly in demand in the various system. Figure 3 shows the proposed arrayed CMOS-MEMS accelerometer that was capable of detecting a wide range of acceleration. The MEMS accelerometer was fabricated by gold electroplating with post-CMOS process. We can obtain the 3-by-3 arrayed MEMS accelerometer with the sensing range from 1.7G to 20G(Fig. 4).  Also, using the simulation results obtained by the above multi-physics platform, we can realize the CMOS-MEMS accelerometer.

In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the More than Moore technology.

References

[1] K. Machida, et al., IEEE Trans. Electron Devices 48, 2273 (2001).

[2]K. Machida, et al., SSDM2010, Tokyo, Sep. 24, p.818(2010).

[3]H. Toshiyoshi, et al., IEDM 2012, USA, p. 6.3.1(2012).

[4]T. Konishi, et al., IEEE/ASME J. Microelectromech. Syst., vol. 22, no. 3, Jun. p.755 (2013).

[5]D. Yamane, et al., Transducers 2013, Spain, p.22 (2013).

[6]T. Konishi, et al., Jpn. J. Appl. Phys., vol. 52, p. 06GL04(2013).  [7]T. Konishi, et al., SSDM 2013, Sept. 24-27, Fukuoka, Japan. p.844(2013).