Novel Wide Energy Bandgap Electronic and Optical Devices I

Wednesday, May 14, 2014: 08:15-12:15
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
J. Laroche and C.-F. Lo
08:15
1532
(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes
A. V. Sampath (U.S. Army Research Laboratory), Y. Chen (University of Virginia), L. E. Rodak (U.S. Army Research Laboratory), Q. Zhou, J. C. Campbell (University of Virginia), H. Shen, and M. Wraback (U.S. Army Research Laboratory)
08:45
1533
Perspectives of Group III-Nitride Material for Photoelectrocatalysis
N. Dietz (Georgia State University)
09:15
1534
Superatmospheric MOCVD Growth of Bulk InGaN for Template and Optoelectronic Applications
M. Conway, P. C. Deguzman (The University of North Carolina at Charlotte), and E. B. Stokes (University of North Carolina at Charlotte)
09:35
Break
10:05
1535
(Invited) Spatially Resolved Study of the EQE Droop in InGaN QW LEDs: Interplay of Point Defects, Extended Defects, and Carrier Localization
Y. Lin (University of North Carolina at Charlotte, Chinese Academy of Sciences), Y. Zhang (University of North Carolina at Charlotte), Z. Liu, T. Wei (Chinese Academy of Sciences), and Z. Chen (Xiamen University)
10:35
1536
Current Confinement Effect of InGaN Devices by Forming Photoelectrochemical-Oxidized GaN Nanoporous Structures
C. F. Lin (National Chung Hsing University, Yale University), W. C. Lee, Y. L. Chen, Y. H. Tseng, J. J. Dai (National Chung Hsing University), and J. Han (Yale University)
10:55
1537
Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements
J. R. Krause (The University of North Carolina at Charlotte), E. B. Stokes (University of North Carolina at Charlotte), P. C. Deguzman (The University of North Carolina at Charlotte), Y. Mizuyama (Panasonic Boston Laboratory), and R. Kolli (The University of North Carolina at Charlotte)
11:15
1538
Field Effect Transistor with Electrodeposited Nanowire Channels
E. Matei, C. Florica, A. Costas, M. Enculescu, A. Evanghelidis, and I. Enculescu (National Institute of Materials Physics)
11:35
1539
Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures
Y. Takei, M. Okamoto (Tokyo Institute of Technology), W. Saito (Toshiba Corp. Semiconductor & Storage Products Company), K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, and H. Iwai (Tokyo Institute of Technology)
 
1540
Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget (Cancelled)
See more of: Q2: Wide Bandgap Semiconductor Materials and Devices 15
See more of: Electronic and Photonic Devices and Systems
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