Novel Wide Energy Bandgap Electronic and Optical Devices I

Wednesday, May 14, 2014: 08:15-12:15
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
J. Laroche and C.-F. Lo
(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes
A. V. Sampath (U.S. Army Research Laboratory), Y. Chen (University of Virginia), L. E. Rodak (U.S. Army Research Laboratory), Q. Zhou, J. C. Campbell (University of Virginia), H. Shen, and M. Wraback (U.S. Army Research Laboratory)
Superatmospheric MOCVD Growth of Bulk InGaN for Template and Optoelectronic Applications
M. Conway, P. C. Deguzman (The University of North Carolina at Charlotte), and E. B. Stokes (University of North Carolina at Charlotte)
(Invited) Spatially Resolved Study of the EQE Droop in InGaN QW LEDs: Interplay of Point Defects, Extended Defects, and Carrier Localization
Y. Lin (University of North Carolina at Charlotte, Chinese Academy of Sciences), Y. Zhang (University of North Carolina at Charlotte), Z. Liu, T. Wei (Chinese Academy of Sciences), and Z. Chen (Xiamen University)
Current Confinement Effect of InGaN Devices by Forming Photoelectrochemical-Oxidized GaN Nanoporous Structures
C. F. Lin (National Chung Hsing University, Yale University), W. C. Lee, Y. L. Chen, Y. H. Tseng, J. J. Dai (National Chung Hsing University), and J. Han (Yale University)
Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements
J. R. Krause (The University of North Carolina at Charlotte), E. B. Stokes (University of North Carolina at Charlotte), P. C. Deguzman (The University of North Carolina at Charlotte), Y. Mizuyama (Panasonic Boston Laboratory), and R. Kolli (The University of North Carolina at Charlotte)
Field Effect Transistor with Electrodeposited Nanowire Channels
E. Matei, C. Florica, A. Costas, M. Enculescu, A. Evanghelidis, and I. Enculescu (National Institute of Materials Physics)
Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures
Y. Takei, M. Okamoto (Tokyo Institute of Technology), W. Saito (Toshiba Corp. Semiconductor & Storage Products Company), K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, and H. Iwai (Tokyo Institute of Technology)
Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget (Cancelled)