3D Integration and Microsystems

Wednesday, May 14, 2014: 08:20-11:55
Flagler, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Paul A Kohl and O. M. Leonte
08:20
1467
Precise Chemistry Control Using Cyclic Stripping Voltammetry for Improved through Silicon via Fill
H. Shen, C. Uzoh, and T. Dinan (Invensas Corporation)
08:40
1468
(Invited) 2.5D Advanced System-in-Package: Processes, Materials & Integration Aspects
R. V. Shenoy, K. Y. Lai, and E. Gusev (Qualcomm)
09:20
1469
Analysis of High Aspect Ratio through Silicon via (TSV) Diffusion and Stress Impact Profile during 3D Advanced Integration
L. Djomeni (CEA, LETI), T. Mourier (CEA-Leti, Minatec Campus), S. Minoret (CEA, LETI), S. Fadloun (SPTS SAS), J. P. Barnes, D. Rouchon (CEA, LETI), S. Burgess, A. Price (SPTS), L. Vandroux (CEA-Leti, Minatec Campus), and D. Mathiot (ICube Laboratory Université de Strasbourg and CNRS)
09:40
Break
10:00
1470
(Invited) Thin Film Technologies for Micro/Nano Systems; A Review
H. W. van Zeijl (Delft University of Technology)
10:40
1471
High Sensitivity, Positive Tone, Low-k Polynorbornene Dielectrics
B. K. Mueller, J. Schwartz, A. Sutlief, and P. A. Kohl (Georgia Institute of Technology)
11:00
1472
Low-Cost MEMS Packaging Using Polymer-Based Air-Gaps
E. Uzunlar and P. A. Kohl (Georgia Institute of Technology)
11:20
1473
Positive Tone, Low-k Polynorbornene Dielectric Crosslinking
J. Schwartz, B. K. Mueller, and P. A. Kohl (Georgia Institute of Technology)
11:40
Concluding Remarks
See more of: P2: Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications 4
See more of: Electronic Materials and Processing
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