Q2 Wide Bandgap Semiconductor Materials and Devices 15 Poster Session

Wednesday, May 14, 2014: 18:00-20:00
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
Chairs:
Albert G. Baca and JiHyun Kim
 
1550
Enhanced Device Characteristics of Mos-Hemts with HfO2/Al2O3 Stacked Dielectrics By Using Sputtering/Ozone Water Oxidation Techniques (Cancelled)
1551
Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
K. Kurishima (Meiji University, National Institute for Materials Science), T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo (National Institute for Materials Science), and A. Ogura (Meiji University)
1552
(Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes
H. Kim (Dankook University), K. H. Baik (Hongik University), F. Ren, S. J. Pearton (University of Florida), and S. Jang (Dankook University)
1553
Air-Hybrid Dbr Structure for the Improvement of Light Output Power in Algainp-Based LED
H. S. Oh (Korea Photonics Technology Institute)
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