N2 Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing Poster Session

Wednesday, May 14, 2014: 18:00-20:00
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
Chairs:
Durga Misra , D. Bauza , Yaw S. Obeng and Zhi David Chen
1390
Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures
I. P. Tyagulskyy, S. I. Tiagulskyi, A. N. Nazarov, V. S. Lysenko (Lashkaryov Institute of Semiconductor Physics, NASU), P. K. Hurley, K. Cherkaoui, and S. Monaghan (University College Cork)
1391
Measuring CET of High-k Dielectrics with Novel Kinetic Approach Using Micro-Site Corona – Kelvin Method
D. Marinskiy (Semilab SDI), T. C. Loy (Semilab Taiwan), H. C. Yeh (Hermes Epitek), M. Wilson, and J. Lagowski (Semilab SDI)
1392
Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
K. Kanomata, H. Ohba, P. P. Pansila, T. Suzuki, B. Ahmmad, S. Kubota, K. Hirahara, and F. Hirose (Yamagata University)
1393
Comparison between Equilibrium Voltage Step and Charge Pumping Techniques  for Characterizing near Si-SiO2 Interface Traps
N. Guenifi (University of Batna, IMEP-LAHC) and D. Bauza (IMEP-LAHC)
1394
Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
1395
Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type
D. Nguyen (COSMIAC), K. Kambour (Leidos), C. Kouhestani (COSMIAC), and R. A. B. Devine (Think-Strategically)
1396
Characterization of a Novel Radical Nitrogen Plasma Source for Semiconductor Nitridation
A. T. Lucero (University of Texas at Dallas), T. Cho (Samsung Electronics Co.), and J. Kim (University of Texas at Dallas)
1397
The Improvement of FN Degradation in 3-Dimension TR
S. Y. Ha, S. G. Park (Samsung Electronics Co., Ltd, Sungkyunkwan University), S. D. Kim, H. C. Kim, K. P. Lee (Samsung Electronics Co., Ltd), and I. S. Jung (Sungkyunkwan University)
1398
Integration of Advanced MOSFET Device with Dual Effective Band Edge Work Function Metals Using Both HK and MG Last Scheme
Z. Tang, B. Tang, J. Xu, Y. Xu, H. Wang, J. Li, J. Yan, and C. Zhao (Institute of Microelectronics of Chinese Academy of Sciences)
See more of: N2: Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing
See more of: Dielectric Science and Materials
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