N2 Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing Poster Session

Wednesday, May 14, 2014: 18:00-20:00
Grand Foyer, Lobby Level (Hilton Orlando Bonnet Creek)
Durga Misra , D. Bauza , Yaw S. Obeng and Zhi David Chen
Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures
I. P. Tyagulskyy, S. I. Tiagulskyi, A. N. Nazarov, V. S. Lysenko (Lashkaryov Institute of Semiconductor Physics, NASU), P. K. Hurley, K. Cherkaoui, and S. Monaghan (University College Cork)
Measuring CET of High-k Dielectrics with Novel Kinetic Approach Using Micro-Site Corona – Kelvin Method
D. Marinskiy (Semilab SDI), T. C. Loy (Semilab Taiwan), H. C. Yeh (Hermes Epitek), M. Wilson, and J. Lagowski (Semilab SDI)
Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
K. Kanomata, H. Ohba, P. P. Pansila, T. Suzuki, B. Ahmmad, S. Kubota, K. Hirahara, and F. Hirose (Yamagata University)
Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma
T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type
D. Nguyen (COSMIAC), K. Kambour (Leidos), C. Kouhestani (COSMIAC), and R. A. B. Devine (Think-Strategically)
Characterization of a Novel Radical Nitrogen Plasma Source for Semiconductor Nitridation
A. T. Lucero (University of Texas at Dallas), T. Cho (Samsung Electronics Co.), and J. Kim (University of Texas at Dallas)
The Improvement of FN Degradation in 3-Dimension TR
S. Y. Ha, S. G. Park (Samsung Electronics Co., Ltd, Sungkyunkwan University), S. D. Kim, H. C. Kim, K. P. Lee (Samsung Electronics Co., Ltd), and I. S. Jung (Sungkyunkwan University)
Integration of Advanced MOSFET Device with Dual Effective Band Edge Work Function Metals Using Both HK and MG Last Scheme
Z. Tang, B. Tang, J. Xu, Y. Xu, H. Wang, J. Li, J. Yan, and C. Zhao (Institute of Microelectronics of Chinese Academy of Sciences)