N2 Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing

Lead Organizer: Durga Misra (New Jersey Institute of Technology)

Co-organizers: Yaw S. Obeng (NIST) , Toyohiro Chikyow (National Institute for Materials Science) , Hiroshi Iwai (Tokyo Institute of Technology) , Z. Chen (University of Kentucky) and D. Bauza (Institut de Microelectronique)

Monday, May 12, 2014

08:05-10:40


High-K Processing and Characterization
Taylor, Ground Level
Chair(s): D. Bauza and Durga Misra

11:00-12:30


Ge Interface and Passivation
Taylor, Ground Level
Chair(s): Johannes Heitmann and H. Joerg Osten

14:00-15:30


III-V/High-K Interface
Taylor, Ground Level
Chair(s): Ivona Z. Mitrovic and Kandabara Tapily

15:40-16:40


Interface Engineering
Taylor, Ground Level
Chair(s): Aswini K Pradhan and Clement Merckling

Tuesday, May 13, 2014

08:00-09:30


Dielectric Characterization
Taylor, Ground Level
Chair(s): Yaw S. Obeng and Zhi David Chen

10:00-12:00


Advanced Devices and Integration
Taylor, Ground Level
Chair(s): Zhi David Chen and Minghwei Hong

14:00-17:20


Memory Devices and Technology
Taylor, Ground Level
Chair(s): Martin M. Frank and Anabela Veloso

Wednesday, May 14, 2014

08:00-10:30


Nanostructured Dielectrics and Characterization
Taylor, Ground Level
Chair(s): Yongxun Liu and Yuan Lin

11:00-12:00


Emerging Devices
Taylor, Ground Level
Chair(s): Toshihide Nabatame and Takahiro Nagata

14:00-16:10


NEMS - MEMS and Sensor Systems
Taylor, Ground Level
Chair(s): Ajit Khosla, Edward M Sabolsky and Durga Misra

18:00-20:00


N2 Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing Poster Session
Grand Foyer, Lobby Level
Chair(s): Durga Misra, D. Bauza, Yaw S. Obeng and Zhi David Chen