Advanced Devices and Integration

Tuesday, May 13, 2014: 10:00-12:00
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Zhi David Chen and Minghwei Hong
10:00
(Invited) Gate Stacks for Silicon, Silicon Germanium, and III-V Channel MOSFETs
M. M. Frank, Y. Zhu, S. W. Bedell, T. Ando, and V. Narayanan (IBM T. J. Watson Research Center)
10:30
(Invited) Replacement Metal Gate/High-k Last Technology for Aggressively Scaled Planar and FinFET-Based Devices
A. Veloso, J. W. Lee (Imec), E. Simoen (imec vzw), L. Ragnarsson, H. Arimura, M. J. Cho, G. Boccardi (Imec), A. Thean (IMEC), and N. Horiguchi (Imec)
11:00
Processing Challenges of CMOS Integration of Finfets with All-Last Gate Stacks
C. Zhao, T. Ye (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), H. Zhu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences), H. Yin, J. Luo, H. Yang, C. Li, T. Yang, H. Cui, J. Gao (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), G. Wang (Institute of Microelectronics of Chinese Academy of Sciences), Q. Xu, J. Xiang, Y. Zhang, Z. Zhao, J. Liu, P. Hong, L. Meng, T. Li, J. Li, X. He, W. Xiong (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), D. Wang (Institute of Microelectronics of Chinese Academy of Sciences), Y. Lu (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), J. Li (Institute of Microelectronics of Chinese Academy of Sciences), H. Zhong (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China), H. Yin, J. Yan (Institute of Microelectronics of Chinese Academy of Sciences), and W. Wang (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)