Interface Engineering

Monday, May 12, 2014: 15:40-16:40
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Aswini K Pradhan and Clement Merckling
(Invited) Understanding of Growth Kinetics of Thermal Oxides on 4H-SiC (0001) for Control of MOS Characteristics
K. Kita (The University of Tokyo, JST-PRESTO), R. H. Kikuchi, and H. Hirai (The University of Tokyo)
(Invited) Atomic Layer Deposition of HfO2 Using HF Etched Thermal and RTP SiO2 as Interfacial Layers
L. Han (University of Kentucky) and Z. D. Chen (University of Kentucky, University of Electronic Science & Technology of China)