Ge Interface and Passivation

Monday, May 12, 2014: 11:00-12:30
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Johannes Heitmann and H. Joerg Osten
(Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology
I. Z. Mitrovic, M. Althobaiti, A. D. Weerakkody, N. Sedghi, S. Hall, V. R. Dhanak, S. Mather, P. R. Chalker (University of Liverpool), D. Tsoutsou, A. Dimoulas (NCSR Demokritos), C. Henkel, E. D. Litta, P. E. Hellström, and M. Östling (KTH Royal Institute of Technology)
(Invited) Passivation Schemes for Ge High-K Metal Gate MOSFETs on Si for VLSI Production
K. Tapily (TEL Technology Center, America), T. Ngai (Sematech), R. Clark, D. O'meara, S. Consiglio, R. Gaylord, C. Wajda (TEL Technology Center, America), D. Veksler, C. Hobbs, K. Matthews, D. Gilmer, P. Kirsch (Sematech), and G. Leusink (TEL Technology Center, America)
(Invited) Atomic-Order Thermal Nitridation of Si, Si1-xGex and Ge by NH3 
J. Murota, M. Sakuraba (Tohoku University), and B. Tillack (IHP, Technische Universität Berlin)