Memory Devices and Technology

Tuesday, May 13, 2014: 14:00-17:20
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Martin M. Frank and Anabela Veloso
14:00
(Invited) Charge Trapping Type SOI-FinFET Flash Memory
Y. Liu (National Institute of Advanced Industrial Science and Technology), T. Nabatame (National Institute for Materials Science), T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota (National Institute of Advanced Industrial Science and Technology), T. Chikyow (National Institute for Materials Science), and M. Masahara (National Institute of Advanced Industrial Science and Technology)
14:30
(Invited) High-k Dielectrics and High Work Function Metals for Hybrid Floating Gate NAND Flash Applications
J. G. Lisoni, L. Breuil, P. Blomme (IMEC), F. De Stefano, V. V. Afanas'ev (KU Leuven), G. Van den bosch, and J. Van Houdt (IMEC)
15:00
(Invited) Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
T. Nabatame, A. Ohi (National Institute for Materials Science), K. Ito, M. Takahashi (Osaka University), and T. Chikyo (National Institute for Materials Science)
15:30
Break
15:50
(Invited) Photoelectron Spectroscopic Study on High-k Dielectrics Based Nanoionics-Type ReRAM Structure under Bias Operation
T. Nagata, Y. Yamashita, H. Yoshikawa (National Institute for Materials Science), K. Kobayashi (Japan Atomic Energy Agency, Hiroshima University), and T. Chikyow (National Institute for Materials Science)
16:20
(Invited) Temperature Impact on Reliablity and Manufacturing of Embedded HfOx-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering Reflow
S. Tirano (CEA-LETI, Aix-Marseille Université), L. Perniola (CEA Leti), C. Cagli, E. Jalaguier, V. Jousseaume (CEA-LETI), D. Deleruyelle, C. Muller (Aix-Marseille Université), B. de Salvo (CEA Leti), and G. Reimbold (CEA-LETI)
16:50
(Invited) Resistive Switching and Current Status of HfO2-based RRAM
C. Walczyk, M. Sowinska, D. Walczyk, P. Calka (IHP), and T. Schroeder (IHP, IHP)