High-K Processing and Characterization

Monday, May 12, 2014: 08:05-10:40
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
D. Bauza and Durga Misra
08:05
Welcoming Remarks
08:10
1352
(Invited) Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon
H. J. Osten, D. Schwendt, A. R. Chaudhuri, A. Fissel (Leibniz University Hannover), P. Shekhter, and M. Eizenberg (Technion Haifa)
08:40
1353
(Invited) Electrical Characterization of Defects in Al2O3
A. Schmid (TU Bergakademie Freiberg), F. Kersten (TU Bergakademie Freiberg, Hanwha Q Cells GmbH), S. Rentrop, B. Abendroth, D. C. Meyer, and J. Heitmann (TU Bergakademie Freiberg)
09:10
1354
Investigation of Strong Metallic Ta Reduction in ZrO2/Ta2O5 Multi-Laminate Layer Growth
H. Cho, K. W. Park, J. H. Ahn, C. H. Park, H. J. Cho, S. J. Yeom, K. Hong, and N. J. Kwak (SK Hynix)
09:30
Break
09:50
1355
(Invited) High Pressure Sputtering for High-K Dielectric Deposition. Is It Worth Trying
E. San Andrés, P. C. Feijoo, M. Pampillón, M. L. Lucía, and del Prado (Universidad Complutense de Madrid)
10:20
1356
Cyclic Plasma Treatment during ALD Hf1-XZrxO2 Deposition
M. Bhuyian, D. Misra (New Jersey Institute of Technology), K. Tapily, R. Clark, S. Consiglio, C. Wajda, G. Nakamura, and G. Leusink (TEL Technology Center, America)
See more of: N2: Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing
See more of: Dielectric Science and Materials
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