High-K Processing and Characterization

Monday, May 12, 2014: 08:05-10:40
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
D. Bauza and Durga Misra
Welcoming Remarks
(Invited) Tuning Dielectric Properties of Epitaxial Lanthanide Oxides on Silicon
H. J. Osten, D. Schwendt, A. R. Chaudhuri, A. Fissel (Leibniz University Hannover), P. Shekhter, and M. Eizenberg (Technion Haifa)
(Invited) Electrical Characterization of Defects in Al2O3
A. Schmid (TU Bergakademie Freiberg), F. Kersten (TU Bergakademie Freiberg, Hanwha Q Cells GmbH), S. Rentrop, B. Abendroth, D. C. Meyer, and J. Heitmann (TU Bergakademie Freiberg)
Investigation of Strong Metallic Ta Reduction in ZrO2/Ta2O5 Multi-Laminate Layer Growth
H. Cho, K. W. Park, J. H. Ahn, C. H. Park, H. J. Cho, S. J. Yeom, K. Hong, and N. J. Kwak (SK Hynix)
(Invited) High Pressure Sputtering for High-K Dielectric Deposition. Is It Worth Trying
E. San Andrés, P. C. Feijoo, M. Pampillón, M. L. Lucía, and del Prado (Universidad Complutense de Madrid)
Cyclic Plasma Treatment during ALD Hf1-XZrxO2 Deposition
M. Bhuyian, D. Misra (New Jersey Institute of Technology), K. Tapily, R. Clark, S. Consiglio, C. Wajda, G. Nakamura, and G. Leusink (TEL Technology Center, America)