III-V/High-K Interface

Monday, May 12, 2014: 14:00-15:30
Taylor, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Ivona Z. Mitrovic and Kandabara Tapily
14:00
1360
(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of InGaAs/InP Heterostrucures on Si for Advanced CMOS Devices
C. Merckling, N. Waldron (IMEC), S. Jiang (IMEC, KU Leuven), W. Guo (IMEC), P. Ryan (Jordan Valley Semiconductor UK Ltd), N. Collaert, M. Caymax, K. Barla (IMEC), M. Heyns (KU Leuven, IMEC), A. Thean (IMEC), and W. Vandervorst (KU Leuven, imec)
14:30
1361
(Invited) High κ/InGaAs for Ultimate CMOS – Interfacial Passivation, Low Ohmic Contacts, and Device Performance
W. H. Chang, T. D. Lin, M. H. Liao (National Taiwan University), T. W. Pi (National Synchrotron Radiation Research Center, Taiwan), J. R. Kwo (National Tsing Hua University), and M. Hong (National Taiwan University)
15:00
1362
(Invited) Frequency Dispersion and Band Alignments in ZrO2/n-GaAs MOS Capacitor
R. B. Konda, C. White, D. Thomas, Q. Yang (Norfolk State University), D. Sahu (University of the Witwatersrand), and A. K. Pradhan (Norfolk State University)
See more of: N2: Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing
See more of: Dielectric Science and Materials
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