New Functional Areas

Monday, May 12, 2014: 14:00-16:30
Flagler, Ground Level (Hilton Orlando Bonnet Creek)
Chairs:
Kuniyuki Kakushima and Vijay Narayanan
14:00
1445
(Invited) Quantum Capacitance Measurement of Bilayer Graphene
K. Nagashio, K. Kanayama, T. Nishimura, and A. Toriumi (The University of Tokyo)
14:40
1446
Field-Effect Doping of MoS2 Using a Solid Polymer Electrolyte
E. Kinder, R. Yan, H. Xing, and S. Fullerton-Shirey (Department of Electrical Engineering, University of Notre Dame)
15:00
1447
(Invited) Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions
K. Tomioka (Hokkaido University, Japan Science and Technology Agency) and T. Fukui (Hokkaido Unversity)
15:40
ECS Henry B. Linford Award Introduction
15:50
1448
(Henry B. Linford Award for Distinguished Teaching Address) Low Temperature Plasma Etching of Copper, Silver, and Gold Films
D. W. Hess (Georgia Institute of Technology)
See more of: P2: Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications 4
See more of: Electronic Materials and Processing
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