CMP of Dielectrics

Tuesday, May 13, 2014: 10:00-11:40
Bonnet Creek Ballroom VII, Lobby Level (Hilton Orlando Bonnet Creek)
Chair:
Iqbal Ali
10:00
1425
Role of Surface Chemistry of Ceria Nanoparticles in CMP
J. Seo (WCU Department of Energy Engineering, Hanyang University), J. Moon (WCU Department of Energy Engineering, Hanyang University, Memory Clean/CMP Technology Team, Samsung Electronics), K. Kim (Department of Nanoscale Semiconductor Engineering, Hanyang University), Y. Kim, S. Kim (Manufacturing Technology Team, Semiconductor R&D Center, Samsung Electronics), and U. Paik (Department of Nanoscale Semiconductor Engineering, Hanyang University, WCU Department of Energy Engineering, Hanyang University)
10:20
1426
A Cahn-Hilliard Modeling of Metal Oxide Thin Films for Advanced CMP Applications
A. Karagoz, Y. Sengul, and G. B. Basim (Ozyegin University)
10:40
1427
TiO2 Abrasive for Dielectric CMP Application
H. Cui, E. B. Seo, S. Yun, J. Park, and J. G. Park (Hanyang University)
 
1428
UV VIS Studies of Ce(III)/Ce(IV) Redox Reactions  to Understand Abrasive and Work Surface Interactions during STI CMP (Cancelled)
11:00
1429
The Effect of Amino Acids on Step Height Reduction in STI CMP
K. Kim (Department of Nanoscale Semiconductor Engineering, Hanyang University), J. Seo (WCU Department of Energy Engineering, Hanyang University), J. Moon (WCU Department of Energy Engineering, Hanyang University, Memory Clean/CMP Technology Team, Samsung Electronics), Y. Kim, S. Kim (Manufacturing Technology Team, Semiconductor R&D Center, Samsung Electronics), and U. Paik (WCU Department of Energy Engineering, Hanyang University, Department of Nanoscale Semiconductor Engineering, Hanyang University)
See more of: P1: Chemical Mechanical Polishing 13
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>