In-Situ Studies on 2D Materials

Tuesday, 7 October 2014: 10:40
Expo Center, 1st Floor, Universal 16 (Moon Palace Resort)
R. M. Wallace (University of Texas at Dallas)
The investigation of 2D materials such as graphene and transition metal dichalcogenides for beyond CMOS device concepts emphasizes the importance of surface and interfacial reactions.  A fundamental understanding of such reactions in the context of materials integration for devices greatly benefits from in-situ characterization methods where processes such as surface cleaning, film deposition, and annealing can be simulated and subsequently correlated to device behavior. This invited talk will review our recent work on in-situ characterization of 2D materials in the context of device applications and the correlation of the physical and electrical characterization.

This research is supported in part by the STARNet Center for Low Energy Systems Technology, sponsored by the Semiconductor Research Corporation (SRC) and DARPA, the SWAN Center sponsored by the SRC Nanoelectronics Research Initiative and NIST, and by an IBM Faculty Award.