Thin-film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes

Wednesday, 8 October 2014: 09:20
Expo Center, 1st Floor, Universal 16 (Moon Palace Resort)
B. Arkles, Y. Pan (Gelest Inc.), and A. Kaloyeros (College of Nanoscale Science and Engineering, The University at Albany-SUNY)
MOCVD of trihydridosilanes provides a route for generating self-assembled monolayers on metal substrates. Under mild conditions, trihydridosilanes interact with a variety of clean, hydrogenated and fresh metal and metalloid surfaces, including titanium, silicon and gold.1 In contrast, monohydridosilanes appear to have minimal interaction. All classes of hydridosilanes have minimal interaction with anhydrous oxide surfaces.  A proposed mechanism for the initial steps of deposition involves the dissociative adsorption of the silanes with the formation of hydrogen, followed by topmost atom layer insertion and concomitant surface reconstruction.  New alpha, omega bis(trihydrido)silane precursors are also described which offer the ability for dipodal substrate interaction.    Alpha, omega trihydridosilane  terminated oligopermethylsilanes with the potential to form molecular wires are presented.2

1 B. Arkles, Y.Pan, Y. Kim, E. Eisenbraun, C. Miller, A. Kaloyeros, J. Adhesion Science and Technology, 2014, 2012, 41.

2 B. Arkles, Y. Pan, G. Larson, US Pat. 8,575,381, 2013.