Memory

Wednesday, 8 October 2014: 13:30-16:45
Expo Center, 1st Floor, Universal 18 (Moon Palace Resort)
Chairs:
Daniele Ielmini and Blanka Magyari-Kope
13:30
2111
(Invited) Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability
E. Vianello, P. Blaise, B. Traoré, K. Xue (CEA Leti), L. Fonseca (Center for Semiconductor Devices, University of Campinas), G. Molas, B. de Salvo, L. Perniola (CEA Leti), and Y. Nishi (Stanford University)
14:00
2112
Memory and Logic Electronics Based on Nanoscale Resistive Switches (Memristors)
W. Lu (University of Michigan)
14:30
2113
(Invited)  Resistive Switching Characteristics and Controllable Quantized Conductance in Single-Crystal Anatase TiO2 on Si (001)
E. T. Yu, C. Hu, M. D. McDaniel, A. B. Posadas, A. A. Demkov, and J. G. Ekerdt (University of Texas at Austin)
15:00
Break
15:10
2114
(Invited) The Interplay between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices
B. Magyari-Kope, L. Zhao (Stanford University), K. Kamiya (Kanagawa Institute of Technology), M. Y. Yang (University of Tsukuba), M. Niwa (Tohoku University), K. Shiraishi (Nagoya University), and Y. Nishi (Stanford University)
15:40
2115
(Invited) Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
J. Müller, P. Polakowski (Fraunhofer IPMS-CNT), S. Müller, and T. Mikolajick (NaMLab gGmbH)
16:10
2116
(Invited) Stress-Induced Asymmetric Switching and Filament Instability in Electrochemical Memories
D. Ielmini, S. Ambrogio, and S. Balatti (Politecnico di Milano)
16:40
Introduction to Poster Paper 41593
See more of: Q7: Semiconductors, Dielectrics, and Metals for Nanoelectronics 12
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>