ReRAM-2

Thursday, 9 October 2014: 10:00-11:50
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
Chairs:
Hisashi Shima and Blanka Magyari-Kope
10:00
2050
(Invited) Development, Characterization, and Modeling of a TaOx ReRAM for a Neuromorphic Accelerator
M. J. Marinella, P. R. Mickel, A. J. Lohn, D. R. Hughart, R. Bondi, D. Mamaluy, H. P. Hjalmarson, J. E. Stevens, S. Decker, R. T. Apodaca, B. Evans, J. B. Aimone, F. Rothganger, C. D. James, and E. P. DeBenedictis (Sandia National Laboratories)
10:30
2051
Progresses in Modeling HfOx RRAM Operations and Variability
L. Larcher, O. Pirrotta, F. M. Puglisi, A. Padovani, P. Pavan, and L. Vandelli (University of Modena and Reggio Emilia)
11:00
2052
Reason and Role of Atomic Layer Deposition for PCRAM and ReRAM Films
Z. Karim (AIXTRON Inc), K. Song, L. Yang, and B. Lu (AIXTRON, Inc)
11:30
2053
Implications of Lower Zero-Field Activation Energy of Dielectric in Al2O3/HfO2 Bi-Layer Dielectric RRAM Forming Process
B. Sarkar, B. Lee (North Carolina State University), and V. Misra (Nanosystems Engineering Research Center (NERC) for Advanced Self-Powered Systems of Integrated Sensors and Technologies (ASSIST))
See more of: Q5: Nonvolatile Memories
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