Silicon-based TFTs II

Monday, 6 October 2014: 13:00-14:30
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
Chair:
Stephen J Fonash
13:00
1906
Characteristics of Poly-Si Thin Film Transistors with Highly Biaxially Oriented Linearly Arranged Poly-Si Thin Films Using Double Line Beam Continuous-Wave Laser Lateral Crystallization
M. Yamano, S. I. Kuroki, T. Hirata, T. Sato (Research Institute for Nanodevice and Bio Systems (RNBS)), K. Kotani (Graduate School of Engineering, Tohoku University), and T. Kikkawa (Research Institute for Nanodevice and Bio Systems (RNBS))
13:20
1907
(Invited) Single-Grain Si Tfts Fabricated on a Precursor from Doctor-Blade Coated Liquid-Si
J. Zhang, M. Trifunovic, M. van der Zwan (Delft University of Technology), H. Takagishi (Japan Science and Technology Agency), T. Shimoda (Japan Science and Technology Agency, Japan Advanced Institute of Science and Technology), and R. Ishihara (Delft University of Technology, Japan Advanced Institute of Science and Technology)
13:50
1908
Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics
S. Morisaki, S. Hayashi, S. Yamamoto, T. Nakatani, and S. Higashi (Hiroshima University)
 
1909
Investigation on Metal-Induced Crystallization of Amorphous Silicon Using Xenon Flash-Lamp (Cancelled)
See more of: Q10: Thin Film Transistors 12 (TFT 12)
See more of: Electronic and Photonic Devices and Systems
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