Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions
In this study, we have investigated the effect of SiN film deposition techniques on the interface quality of the resulting SiN/SiO2/Si using spectroscopic room temperature photoluminescence (RTPL) under multiwavelength excitation. The sample preparation procedures are as follows. First, ultra thin (~2.2 nm thick), gate oxide quality, thermal oxide films were grown on 300 mm Si(100) wafers. Nominally 5.0 nm thick SiN films were grown on ~2.0 nm thick SiO2/Si wafers using conventional low pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD) under various nitrogen source flow conditions. The film thickness was measured (after SiO2 film deposition) before and after SiN deposition using ellipsometry. Figure 1 (a) and (b) show RTPL spectra measured at the center of seven different SiN/SiO2/Si wafers under 650 nm excitation and showing maximum RTPL intensity under 650 nm and 827 nm excitation. Significantly large RTPL intensity variations were measured among the seven SiN/SiO2/Si wafers. The SiN film deposition conditions have modified the underlying SiO2/Si interface characteristics. Non-contact RTPL measurements are very sensitive to the thin film deposition techniques and conditions. It is effective as a complimentary dielectrics/Si process and interface characterization and monitoring technique.