Electrical and Physical Characterization Techniques

Wednesday, 27 May 2015: 13:30-14:30
Conference Room 4M (Hilton Chicago)
Chair:
P. J. Timans
13:30
1390
On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy
R. Yokogawa, M. Tomita (School of Science and Technology, Meiji University), T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki (LAPIS Semiconductor Miyagi), and A. Ogura (Meiji University)
13:50
1391
Oxide Structure-Dependent Interfacial Layer Defects of HfAlO/SiO2/Si Stack Analyzed by Conductance Method
Y. M. Ding and D. Misra (New Jersey Institute of Technology)
14:10
1392
Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions
W. S. Yoo (WaferMasters, Inc.), B. G. Kim, S. W. Jin (SK hynix, Inc.), T. Ishigaki, and K. Kang (WaferMasters, Inc.)
See more of: H03: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
See more of: Electronic and Photonic Devices and Systems
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