Electrical and Physical Characterization Techniques

Wednesday, 27 May 2015: 13:30-14:30
Conference Room 4M (Hilton Chicago)
P. J. Timans
On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy
R. Yokogawa, M. Tomita (School of Science and Technology, Meiji University), T. Mizukoshi, T. Hirano, K. Kusano, K. Sasaki (LAPIS Semiconductor Miyagi), and A. Ogura (Meiji University)
Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions
W. S. Yoo (WaferMasters, Inc.), B. G. Kim, S. W. Jin (SK hynix, Inc.), T. Ishigaki, and K. Kang (WaferMasters, Inc.)