1360
(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
In order to experimentally investigate the device characteristics of SiGe FinFETs, we have fabricated strained-Si1-xGex-on-insulator pMOS FinFETs with Ge fraction, x~0.3-0.5 using CMOS-compatible process flows which allow us co-integration with Si or strained-Si for n-type transistors. Highly-compressively-strained SGOI substrates were fabricated using Ge condensation processes and strain transformation to uniaxial was verified by Raman spectroscopy. A gate-first high-K/metal-gate flow with ion-implant-free raised-S/D and aggressively scaled fin and spacer dimensions has been developed to fabricate devices with aggressively scaled gate lengths [4]. A Si-cap-free scheme was developed for the interface passivation to allow CET scaling and eliminate the epitaxial related issues on the 3D architectures. We have observed that non-optimized passivation may result in relatively high interface trap densities and sub-threshold slopes (SS) around 75-80mV/dec for x~0.3 and over 80mV/dec for x~0.5. However, by optimizing the passivation process using a Si-cap-free approach, impressive SS=65mV/dec and 68mV/dec has been achieved for SGOI FinFETs with x~0.3 and x~0.5, respectively. Moreover, significant transport benefit in terms of mobility and drive current has been achieved due to the improved passivation [5]. As a result, we have reported superior mobility characteristic for SGOI pMOS FinFETs with x~0.5 over the state of the art Si, SiGe or relaxed-Ge FinFETs [6].
We have also investigated the short-channel GIDL characteristics of surface-channel strained-Si1-xGex pMOS FinFETs. We have shown devices having a minimum GIDL current of 1nA/μm for x~0.3 and 20nA/μm for x~0.5 at an operating voltage of VDD=0.8V and an operating temperature of 50°C. Temperature-dependent leakage current measurements demonstrate that the GIDL caused by band-to-band tunneling is the dominant leakage mechanism as compared to trap-assisted tunneling for both cases [7].
In summary, we have reported process integration and electrical characterization of SGOI FinFETs with aggressively scaled gate and fin dimensions and Ge content x~0.3-0.5 using an improved Si-cap-free surface passivation process. SiGe-OI FinFETs with x~0.3 can offer superior pMOS characteristics and are promising candidate for both high-performance and low-power applications. On the other hand, while SiGe-OI FinFETs with x~0.5 can offer extremely high mobility and high current drive and transconductance which is applicable to high-performance CMOS, their operation even at low VDD could be a concern for low-power applications, similar to the state-of-the-art Ge FinFETs [8].
- S. Krishnan et al., IEEE IEDM, 634 (2011).
- C. Ortolland et al., IEEE IEDM, 236 (2013).
- A. Khakifirooz et al., IEEE EDL, 34, 1358 (2013).
- P. Hashemi et al., Symp. VLSI Tech., 18 (2013).
- P. Hashemi et al., Symp. VLSI Tech., 18 (2014).
- P. Hashemi et al., IEEE IEDM, 16.1 (2014).
- K. Balakrishnan et al., IEEE DRC, 183 (2014).
- B. Duriez et al., IEEE IEDM, 522 (2013).