Si Nanowires and SiGe Based High Mobility Substrates

Monday, 25 May 2015: 10:00-12:20
Conference Room 4M (Hilton Chicago)
Vijay Narayanan and P. J. Timans
(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
P. Hashemi, K. Balakrishnan, J. A. Ott, E. Leobandung, R. T. Mo, and D. G. Park (IBM T.J. Watson Research Center)
High Mobility Materials on Insulator for Advanced Technology Nodes
W. Schwarzenbach, C. Figuet, D. Delprat, C. Veytizou, I. Huyet, C. Tempesta, L. Ecarnot (SOITEC), J. Widiez (CEA, LETI, MINATEC Campus), V. Loup (CEA-LETI MINATEC Campus), J. M. Hartmann (CEA, LETI, MINATEC Campus), P. Besson (CEA-LETI MINATEC Campus), C. Deguet, F. Mazen (CEA, LETI, MINATEC Campus), B. Y. Nguyen (SOITEC), and C. Maleville (Soitec)
Evaluation of Anisotropic Biaxial Stress in Si1-XGex/Ge Mesa-Structure by Oil-Immersion Raman Spectroscopy
S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita (School of Science and Technology, Meiji University), D. Kosemura (Meiji University), K. Usuda (AIST-GNC), and A. Ogura (Meiji University)
A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
S. Maitrejean (CEA-LETI), N. Loubet (STMicroelectronics), E. Augendre (CEA-LETI), P. F. Morin (STMicroelectronics), S. Reboh, N. Bernier, R. Wacquez (CEA-LETI), B. Lherron (STMicroelectronics), A. Bonnevialle (CEA-LETI, STMicroelectronics), Q. Liu (STMicroelectronics), J. M. Hartmann (CEA-LETI), H. He (IBM Research), A. Halimaoui (STMIcroelectronics), J. Li (IBM Research), S. Pilorget, J. Kanyandekwe (STMicroelectronics), L. Grenouillet (CEA-LETI), F. Chafik, Y. Morand (STMicroelectronics), C. Le Royer, O. Faynot (CEA-LETI), M. Celik (STMicroelectronics), B. Doris (IBM Research), and B. de Salvo (CEA-LETI)
Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques
P. F. Morin (STMicroelectronics), L. Grenouillet (CEA-LETI), N. Loubet, A. Pofelski (STMicroelectronics), D. Lu (IBM), Q. Liu (STMicroelectronics), E. Augendre, S. Maitrejean (CEA-LETI), V. Fiori (STMicroelectronics), B. de Salvo (CEA-LETI), B. Doris (IBM Research), and W. Kleemeier (STMicroelectronics)
Fabricating Si Nanowires with Precisely Controlled Diameter and Spacing (Cancelled)