(Invited) Monolithic Integration of III-V As- and P-Based Devices on Si through Direct MBE Growth and Using Lattice Engineered Substrates
Through work with industry partners, IQE has grown InP-based high electron mobility transistor (HEMT) and quantum well field effect transistor (QWFET) structures directly on Si substrates by MBE. Following a high-K gate dielectric fabrication process, QWFET devices demonstrated high transconductance of 1750μS/μm and high drive current of 0.49mA/μm at VDS=0.5V.  As part of a program funded by the US Defense Advanced Research Projects Agency, IQE developed a direct MBE growth approach of an InP‑based heterojunction bipolar transistor (HBT) structure on the SOLES substrates, and together with our collaborators successfully created clusters of high-speed III-V HBT circuitry monolithically integrated side-by-side with Si CMOS on the same wafer. 
In this paper, we will discuss structural and electronic properties of epitaxial device material, including dislocation filtering in the mismatched metamorphic buffers, and compare performance of devices fabricated on Si with reference material grown on lattice-matched InP substrates.
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