Device Technology - III

Wednesday, 27 May 2015: 14:00-15:40
Williford Room B (Hilton Chicago)
Bich-Yen Nguyen and Joao Antonio Martino
A Steep Subthreshold Swing Technique for Gate-All-Around SOI MOSFETs
C. Y. Chen (National Yat-Sen University), J. T. Lin (National Sun Yat-Sen University), M. H. Chiang (National Cheng Kung University), and W. C. Hsu (National Cheng-Kung University)
Direct Characterization of Impact Ionization Current in Silicon-on-Insulator Body-Contacted MOSFETs
C. Marquez, N. Rodriguez, J. M. Montes, R. Ruiz, F. Gamiz, C. Sampedro (University of Granada), and A. Ohata (Utsunomiya University)
Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation
C. Novo, J. Baptista, M. Guazzeli da Silveira, R. Giacomini (Centro Universitário da FEI), A. Afzalian (TSMC - Logic Advanced Development), and D. Flandre (ICTEAM Institute, UC Louvain)
Threshold Voltage Modeling for Dynamic Threshold UTBB SOI in Different Operation Modes
V. T. Itocazu, K. R. A. Sasaki, M. B. Manini (University of Sao Paulo), V. Sonnenberg (FATEC Sao Paulo e FATEC Osasco, University of Sao Paulo), J. A. Martino (University of Sao Paulo), E. Simoen (imec), and C. Claeys (KU Leuven, imec)