Device Technology - III

Wednesday, 27 May 2015: 14:00-15:40
Williford Room B (Hilton Chicago)
Chairs:
Bich-Yen Nguyen and Joao Antonio Martino
14:00
1343
A Steep Subthreshold Swing Technique for Gate-All-Around SOI MOSFETs
C. Y. Chen (National Yat-Sen University), J. T. Lin (National Sun Yat-Sen University), M. H. Chiang (National Cheng Kung University), and W. C. Hsu (National Cheng-Kung University)
14:20
1344
Direct Characterization of Impact Ionization Current in Silicon-on-Insulator Body-Contacted MOSFETs
C. Marquez, N. Rodriguez, J. M. Montes, R. Ruiz, F. Gamiz, C. Sampedro (University of Granada), and A. Ohata (Utsunomiya University)
14:40
1345
Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation
C. Novo, J. Baptista, M. Guazzeli da Silveira, R. Giacomini (Centro Universitário da FEI), A. Afzalian (TSMC - Logic Advanced Development), and D. Flandre (ICTEAM Institute, UC Louvain)
15:00
1346
Threshold Voltage Modeling for Dynamic Threshold UTBB SOI in Different Operation Modes
V. T. Itocazu, K. R. A. Sasaki, M. B. Manini (University of Sao Paulo), V. Sonnenberg (FATEC Sao Paulo e FATEC Osasco, University of Sao Paulo), J. A. Martino (University of Sao Paulo), E. Simoen (imec), and C. Claeys (KU Leuven, imec)
15:20
Break-4
See more of: H01: Advanced CMOS-Compatible Semiconductor Devices 17
See more of: Electronic and Photonic Devices and Systems
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