GaN based Electronics II

Tuesday, 26 May 2015: 14:00-17:10
Conference Room 4C (Hilton Chicago)
Srabanti Chowdhury and Byung-Jae Kim
(Invited) Power Loss Reduction in Perforated-Channel HFET Switches
M. Shur (Rensselaer Polytechnic Institute), M. Gaevski, R. Gaska (Sensor Electronic Technology, Inc.), G. Simin (University of South Carolina), H. Y. Wong, N. Braga, and R. Mickevicius (SYNOPSYS, Inc.)
A Novel Backside Gate Structure to Improve Device Performance
Y. H. Hwang, W. Zhu, C. Dong, S. Ahn, F. Ren (University of Florida), I. Kravchenko (Oak Ridge National Laboratory), D. Smith (Arizona State University Department of Physics), and S. J. Pearton (University of Florida)
(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates
C. F. Lo, O. Laboutin, C. K. Kao, K. O'Connor, D. Hill, and W. Johnson (IQE)
Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer
C. H. Wu, P. C. Han (National Chiao Tung University), and E. Y. Chang (National Chiao-Tung University)
(Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si
J. I. Chyi (Research Center for Applied Sciences, Academia Sinica, National Central University), Y. M. Hsin, G. Y. Lee (National Central University), and H. C. Chiu (Chang Gung University)
A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via
Y. H. Hwang, T. S. Kang, F. Ren, and S. J. Pearton (University of Florida)