GaN based Optical and Energy Devices

Tuesday, 26 May 2015: 08:00-12:30
Conference Room 4C (Hilton Chicago)
Jennifer K Hite and Krishna Shenai
(Invited) High Efficiency Solar-to-Hydrogen Conversion on InGaN Nanowire Arrays
Z. Mi (McGill University), B. AlOtaibi (McGIll University), and S. Fan (McGill University)
(Invited) Group-III Nitrides to the Extreme --- from LEDs and Solar Cells to the Transistor
A. Bross, L. Zhao, D. Elsaesser, Z. Li, M. Durniak (Rensselaer Polytechnic Institute), T. Detchprohm (Georgia Institute of Technology), T. S. P. Chow, and C. Wetzel (Rensselaer Polytechnic Institute)
(Invited) Applications of Electrochemistry for Novel Wide Bandgap GaN Devices
S. H. Park, C. Zhang, G. Yuan, D. Chen, and J. Han (Yale University)
Hydrothermally Grown Nonpolar a-Plane ZnO and Its Applications
J. Kim (Dankook Univsersity), K. H. Baik (Hongik University), and S. Jang (Dankook University)
(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs
J. J. Carvajal, J. Mena, O. Bilousov (FiCMA-FiCNA, University Rovira i Virgili), O. Martínez, J. Jiménez (GdS-Optronlab, Universtiy of Valladolid), V. Z. Zubialevich (Tyndall National Institute), P. J. Parbrook (Tyndall National Insitute, University College Cork), H. Geaney (University College Cork, Tyndall National Institute), C. O'Dwyer (Tyndall National Institute, University College Cork), F. Díaz, and M. Aguiló (FiCMA-FiCNA, University Rovira i Virgili)