Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s
In this paper, we aim to identify the necessary input parameters for future RF simulation of radiation effects on AlGaN/GaN HEMTs. In previous work, we have found that donor traps have a larger role than previously thought on the magnitude of DC performance degradation. We use experimental techniques to identify the donor trap lifetimes and energies, both of which are incorporated into a transient simulation of the HEMT and compared to results obtained experimentally. The experiments are long-term transient measurements of drain current after a step in gate voltage for various temperatures, resulting in the establishment of capture and release time constants associated with donor traps.
(1) J. Chen, E. X. Zhang, C. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, IEEE Trans. Nucl. Sci, 61 (6), 2959, (2014).