Radiation Effects

Wednesday, October 14, 2015: 08:00-10:20
Curtis A (Hyatt Regency)
Chair:
Erica Douglas
08:00
1222
Simulating RF Performance of Proton Irradiated AlGaN/GaN High Electron Mobility Transistors (HEMT)s
S. Mukherjee, E. Patrick (University of Florida), and M. E. Law (University of Florida)
08:40
1223
Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors
S. Ahn, C. Dong, W. Zhu, B. J. Kim, Y. H. Hwang, F. Ren (University of Florida), S. J. Pearton (University of Florida), G. Yang (Korea University), J. Kim (Korea University), and I. Kravchenko (Oak Ridge National Laboratory)
09:00
1224
Cathodoluminescence Studies of Gamma-Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors (HEMTs)
A. Yadav, M. Antia, E. Flitsiyan (University of Central Florida), L. Chernyak (University of Central Florida), I. Lubomirsky (Weizmann Institute of Science), and J. Salzman (Israel Institute of Technology)
09:40
1225
Effects of 340 Kev Proton Irradiation on InGaN/GaN Blue Light-Emitting Diodes
B. J. Kim, S. Ahn, Y. H. Hwang, F. Ren (University of Florida), S. J. Pearton (University of Florida), J. Kim (Korea University), and M. L. Zhang (Hebei University of Technology)
10:00
Break
See more of: H03: State-of-the-Art Program on Compound Semiconductors 58 (SOTAPOCS 58)
See more of: Electronic and Photonic Devices and Systems
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