Cathodoluminescence Studies of Gamma-Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Wednesday, October 14, 2015: 09:00
Curtis A (Hyatt Regency)
A. Yadav, M. Antia, E. Flitsiyan (University of Central Florida), L. Chernyak (University of Central Florida), I. Lubomirsky (Weizmann Institute of Science), and J. Salzman (Israel Institute of Technology)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are the most advanced electronic nitride devices to be used at high temperatures and in harshly radiated environments. A clear understanding of radiation effects on these devices is essential in order to predict their behavior in space and terrestrial applications including military, nuclear and high energy physics. Only a limited amount of insight exists into the behavior of III-N based junction transistor after exposure to gamma irradiation. Investigation of gamma-irradiated device properties will provide important information about the defects in semiconductor heterostructures. Therefore, it is important to understand how defects are created by gamma-rays and how they can be healed by annealing. Here we present the impact of gamma-irradiation on AlGaN/GaN heterostructures fundamental properties including carrier transport and recombination. We also report the effect of annealing at 200o C over 25 min on gamma-irradiated samples through the Electron Beam Induced Current (EBIC) method.