Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry

Monday, October 12, 2015: 15:30
Ellis East (Hyatt Regency)


Synchrotron X-ray Topography has been shown to be a vital tool for the nondestructive characterization of defects in 4H-SiC crystals [1-2]. Techniques utilizing reflection geometry are particularly useful for discerning defects at different depths below the crystal surface. For example, in studying defects in SiC pin diode structures, which typically comprise a buffer layer homoepitaxially grown on a substrate, with the drift layer grown on top of the buffer layer, it is important to be able to discriminate the depth at which particular defect configurations reside. This is particularly important for the characterization of defects resulting from relaxation processes such as interfacial dislocations and half loop arrays [3]. Accurate discernment of the depth of a defect requires precise measurement of the effective penetration depth of the X-ray beam in the diffraction geometry in question. This paper provides an assessment of the factors controlling that penetration depth in grazing incidence, reflection and back reflection geometries. There are generally two approaches adopted depending of the level of perfection of the crystal. In deformed regions (such as around dislocation cores) the penetration depth is simply determined by photoelectric absorption. In perfect regions it is determined by extinction. We will present a comparison between measured penetration depths in various diffraction geometries with those calculated using these two approaches and develop an optimized model to explain our observations.

[1] Muller, G.S., et al., Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications. Journal of Crystal Growth, 2012. 352(1): p. 39-42.

[2] Dudley, M., et al., Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density, Material Science Forum,2001. 65: p. 353-356.

[3] Wang, H., Dudley, M., et al., Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC. Journal of Electronic Materials, 2015. 44(5): p. 1268-1274