Materials Characterization 1

Monday, October 12, 2015: 14:00-16:00
Ellis East (Hyatt Regency)
Srabanti Chowdhury and N. Ohtani
(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization
H. Das, S. Sunkari, M. Domeij, A. Konstantinov, F. Allerstam (Fairchild Semiconductor), and T. Neyer (Fairchild Semiconductor)
Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
J. Guo, Y. Yang, F. Wu, O. Y. Goue, B. Raghothamachar (Stony Brook University), and M. Dudley (Stony Brook University)
Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry (Cancelled)