Materials Characterization 1

Monday, October 12, 2015: 14:00-16:00
Ellis East (Hyatt Regency)
Chairs:
Srabanti Chowdhury and N. Ohtani
14:00
1113
(Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization
H. Das, S. Sunkari, M. Domeij, A. Konstantinov, F. Allerstam (Fairchild Semiconductor), and T. Neyer (Fairchild Semiconductor)
14:30
1114
(Invited) Structural Characterization of SiC Crystals Grown By Solvent Laser Heated Floating Zone Method and Hot Wall Chemical Vapor Deposition for the Development of a Low Defect Density Bulk Growth Technique for SiC
B. Raghothamachar, O. Y. Goue (Stony Brook University), and M. Dudley (Stony Brook University)
15:00
1115
Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
J. Guo, Y. Yang, F. Wu, O. Y. Goue, B. Raghothamachar (Stony Brook University), and M. Dudley (Stony Brook University)
 
1116
Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry (Cancelled)
See more of: G05: GaN & SiC Power Technologies 5
See more of: Electronic Materials and Processing
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