High Mobility Channel

Monday, October 12, 2015: 09:00-12:30
105-B (Phoenix Convention Center)
Chairs:
Paul C. McIntyre and Shinichi Takagi
09:00
Welcoming Remarks
09:10
812
Optimized Novel Indium Antimonide Quantum Well Field Effect Transistor for High-Speed and Low Power Logic Applications
R. Islam, M. M. Uddin (Chittagong University of Engineering & Technology), and M. A. Matin (Chittagong University of Engineering & Technology)
09:30
813
HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line
M. Billaud (Univ.Grenoble Alpes, LTM, CNRS, Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus), J. Duvernay (Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus), H. Grampeix (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus), B. Pelissier, M. Martin (LTM, CNRS), S. David (Univ.Grenoble Alpes, LTM, CNRS), C. Vallée Sr. (Univ.Grenoble Alpes, LTM, CNRS), Z. Chalupa (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus), H. Boutry (Univ. Grenoble Alpes,CEA-LETI, MINATEC Campus), T. Baron (Univ. Grenoble Alpes, LTM, CNRS), M. Cassé, T. Ernst (Univ. Grenoble Alpes,CEA-LETI), M. Vinet, G. Reimbold (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus), and O. Faynot (Univ. Grenoble Alpes, CEA-LETI, MINATEC Campus)
09:50
Intermission
 
814
(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options (Cancelled)
10:30
815
(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices
S. Takagi (The University of Tokyo, JST-CREST), C. Y. Chang, M. Yokoyama (JST-CREST, The University of Tokyo), K. Nishi, R. Zhang (Zhejiang University, The University of Tokyo), M. Ke, J. H. Han (The University of Tokyo, JST-CREST), and M. Takenaka (The University of Tokyo, JST-CREST)
11:00
816
(Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress
K. Tang, R. Droopad (Texas State University), and P. C. McIntyre (Stanford University)
11:30
817
(Invited) Fabrication of N-Polar (Al,Ga,In)N Heterostructures for Transistor Applications
S. Keller (University of California Santa Barbara) and U. K. Mishra (University of California Santa Barbara)
12:00
818
(Invited) Surface Passivation of High-k Dielectric Materials on Diamond Thin Films
K. K. Kovi, S. Majdi, M. Gabrysch, N. Suntornwipat (Uppsala University), and J. Isberg (Uppsala University)
See more of: D04: Semiconductors, Dielectrics, and Metals for Nanoelectronics 13
See more of: Dielectric Science and Materials
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