ReRAM-3

Thursday, October 15, 2015: 14:00-16:10
Curtis B (Hyatt Regency)
Chairs:
Blanka Magyari-Kope and Kiyoteru Kobayashi
14:00
782
(Invited) Resistive Random Access Memory for Storage Class Applications
S. H. Jo (Crossbar Inc.) and T. Kumar (Crossbar Inc.)
14:30
783
(Invited) Direct Physical Understanding in Memristive Devices and Corresponding Device Models
J. P. Strachan (Hewlett-Packard Laboratories)
15:00
784
(Invited) Mechanism Study of Reversible Resistivity Change in Oxide Thin Film
S. Hong, S. H. Chang (Materials Science Division, Argonne National Laboratory), C. Phatak (Materials Science Division, Argonne National Laboratory), B. Magyari-Kope (Stanford University), Y. Nishi (Stanford University), S. Chattopadhyay (Elgin Community College), and J. H. Kim (Advanced Photon Source, Argonne National Laboratory)
15:30
785
Set and Reset Voltage Interdependence in Resistive Switching Memory Cells
G. Ghosh (ECE Department Virginia Tech) and M. K. Orlowski (ECE Department Virginia Tech)
15:50
786
Analysis of Resistive Switching Characteristics in Surface Anchored Metal Organic Framework (SURMOF) Films
D. M. Nminibapiel (National Institute of Standards and Technology (NIST), Old Dominion University), P. Shrestha (National Institute of Standards and Technology (NIST), Old Dominion University), Z. Wang (Karlsruhe Institute of Technology (KIT)), K. P. Cheung (National Institute of Standards and Technology (NIST)), H. Baumgart (Old Dominion University, Applied Research Center), E. Redel (Karlsruhe Institute of Technology), and C. Wöll (Karlsruhe Institute of Technology (KIT))
See more of: D02: Nonvolatile Memories
See more of: Dielectric Science and Materials
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