MRAM-1

Thursday, October 15, 2015: 08:00-09:30
Curtis B (Hyatt Regency)
Chairs:
Hitoshi Kubota and Jea-Gun Park
08:00
775
(Keynote) Status and Challenges in Spin-Transfer Torque MRAM Technology
M. Krounbi, V. Nikitin, D. Apalkov, J. Lee, X. Tang, R. Beach, D. Erickson (Samsung), and E. Chen (Samsung)
08:40
776
(Invited) Low Power Stt-Mram and Its Application to Normally-Off Processor
N. Shimomura, D. Saida, T. Daibou, Y. Kato, C. Kamata, S. Kashiwada, Y. Osawa, H. Noguchi, J. Ito, S. Fujita (Toshiba Corporation), and H. Yoda (Toshiba Corporation)
09:10
777
Co2Fe6B2/MgO-Based Perpendicular Spin-Transfer-Torque Magnetic-Tunnel-Junction Spin-Valve without [Co/Pt]n lower Synthetic-Antiferromagnetic Layer
S. E. Lee (Hanyang University), T. H. Shim (Hanyang University), and J. G. Park (Hangyang University)
See more of: D02: Nonvolatile Memories
See more of: Dielectric Science and Materials
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