MRAM-2

Thursday, October 15, 2015: 10:00-11:40
Curtis B (Hyatt Regency)
Chairs:
Hitoshi Kubota and Jea-Gun Park
10:00
778
(Invited) Spin Torque Switching in Magnetic Random Access Memory
T. Taniguchi (Spintronics Research Center, AIST)
10:40
779
Critical BEOL Aspects of the Fabrication of a Thermally-Assisted MRAM Device
E. J. O'Sullivan, D. Edelstein (IBM T.J. Watson Research Center), N. Marchack, M. Lofaro (IBM T. J. Watson Research Center), M. Gaidis, E. Joseph, A. Annunziata, D. Pfeiffer (IBM Research Division, T.J. Watson Research Center), P. L. Trouilloud, Y. Zhu (IBM T. J. Watson Research Center), S. Holmes, A. Galan, A. M. Pyzna (IBM Research Division, T.J. Watson Research Center), and J. Gonsalves (IBM Research Division, T.J. Watson Research Center)
11:00
780
Thermal Stability Enhancement of Magnetic Perpendicular-Magnetic Tunnel Junctions Using Double MgO Interface Structure
Y. Takemura (SUMCO Corporation), D. Y. Lee, S. Lee, J. U. Baek (Hanyang University), T. H. Shim (Hanyang University), and J. G. Park (Hangyang University)
11:20
781
Effects of Radio-Frequency Sputtering Power of MgO Tunneling Barrier on Tunneling Magneto-Resistance Ratio for Cofeb/MgO-Based Perpendicular-Magnetic Tunnel Junctions
D. Y. Lee (Hanyang University), G. S. Lee (Hanyang University), H. T. Seo (Ajou University), and J. G. Park (Hangyang University)
See more of: D02: Nonvolatile Memories
See more of: Dielectric Science and Materials
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